Thermo-Mechanical Characterization of Single-Walled Carbon Nanotube (SWCNT)-Based Through-Silicon via (TSV) in (100) Silicon
Through-silicon vias (TSVs) provide physical and electrical connectivity among the stacked dies in three-dimensional integration. Carbon nanotubes (CNTs) have been proposed as a promising material to the future interconnects due to their attractive properties. This letter investigates the thermo-mechanical characterization of single-walled carbon nanotube (SWCNT)-based TSV in (100) silicon. The thermal stress induced by SWCNT-based TSV is obtained by performing finite element method (FEM) simulation. And the keep-out zone (KOZ), the region surrounding TSV within which devices cannot be made for sake of reliability, is further evaluated for pMOS (p-type metal-oxide-semiconductor) and nMOS (n-type metal-oxide-semiconductor) devices aligned along the  and  directions. It is shown that, the KOZ of SWCNT-based TSV could reach nearly 4 m, which is not negligible although it is much smaller than that of Cu TSV. And it is suggested that, the  channel orientation is preferred for pMOS and  for nMOS, respectively, in order to minimize the KOZ.
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Document Type: Short Communication
Publication date: June 1, 2015
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- Nanoscience and Nanotechnology Letters (NNL) is a multidisciplinary peer-reviewed journal consolidating nanoscale research activities in all disciplines of science, engineering and medicine into a single and unique reference source. NNL provides the means for scientists, engineers, medical experts and technocrats to publish original short research articles as communications/letters of important new scientific and technological findings, encompassing the fundamental and applied research in all disciplines of the physical sciences, engineering and medicine.
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