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Thermo-Mechanical Characterization of Single-Walled Carbon Nanotube (SWCNT)-Based Through-Silicon via (TSV) in (100) Silicon

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Through-silicon vias (TSVs) provide physical and electrical connectivity among the stacked dies in three-dimensional integration. Carbon nanotubes (CNTs) have been proposed as a promising material to the future interconnects due to their attractive properties. This letter investigates the thermo-mechanical characterization of single-walled carbon nanotube (SWCNT)-based TSV in (100) silicon. The thermal stress induced by SWCNT-based TSV is obtained by performing finite element method (FEM) simulation. And the keep-out zone (KOZ), the region surrounding TSV within which devices cannot be made for sake of reliability, is further evaluated for pMOS (p-type metal-oxide-semiconductor) and nMOS (n-type metal-oxide-semiconductor) devices aligned along the [100] and [110] directions. It is shown that, the KOZ of SWCNT-based TSV could reach nearly 4 m, which is not negligible although it is much smaller than that of Cu TSV. And it is suggested that, the [100] channel orientation is preferred for pMOS and [110] for nMOS, respectively, in order to minimize the KOZ.
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Keywords: KEEP-OUT ZONE (KOZ); SINGLE-WALLED CARBON NANOTUBE (SWCNT); THERMAL STRESS; THREE-DIMENSIONAL INTEGRATION; THROUGH-SILICON VIA (TSV)

Document Type: Short Communication

Publication date: June 1, 2015

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  • Nanoscience and Nanotechnology Letters (NNL) is a multidisciplinary peer-reviewed journal consolidating nanoscale research activities in all disciplines of science, engineering and medicine into a single and unique reference source. NNL provides the means for scientists, engineers, medical experts and technocrats to publish original short research articles as communications/letters of important new scientific and technological findings, encompassing the fundamental and applied research in all disciplines of the physical sciences, engineering and medicine.
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