Effect of Image Force on Tunneling Current for Ultra Thin Oxide Layer Based Metal Oxide Semiconductor Devices
In this letter, an analytical model for evaluation of tunneling current density of ultra thin Metal Oxide Semiconductor (MOS) devices is presented. For such devices, the area of the potential barrier is reduced by rounding off the corners, reducing the thickness due to image potential, hence are very important for accurate modeling. In this work, improvement in the analysis is brought in by taking into account the barrier height lowering due to the image force effect. The voltage range under consideration is 0 ≤ V ≤ ψ1/e. Tunnel resistivity is also evaluated utilizing this tunneling current density model. Theoretical predictions are compared with the results obtained by the 2D numerical device simulator ATLAS and published experimental results, excellent agreements between the three are observed.
No Reference information available - sign in for access.
No Citation information available - sign in for access.
No Supplementary Data.
No Article Media
Document Type: Short Communication
Publication date: April 1, 2015
More about this publication?
- Nanoscience and Nanotechnology Letters (NNL) is a multidisciplinary peer-reviewed journal consolidating nanoscale research activities in all disciplines of science, engineering and medicine into a single and unique reference source. NNL provides the means for scientists, engineers, medical experts and technocrats to publish original short research articles as communications/letters of important new scientific and technological findings, encompassing the fundamental and applied research in all disciplines of the physical sciences, engineering and medicine.
- Editorial Board
- Information for Authors
- Subscribe to this Title
- Ingenta Connect is not responsible for the content or availability of external websites