Effect of Dipping Cycle on Photoelectrochemical Characteristic of Mix-Phase AgIn5S8/AgInS2 Thin Films Prepared via Chemical Process
Thin films of mix-phase AgIn5S8/AgInS2 (AIS) were deposited on Sn-doped In2O3 glass substrates via chemical bath deposition. Effect of dipping cycle (1 to 4) on structural, optical and photoelectrochemical (PEC) characteristics of AIS films were investigated. The as-obtained samples after annealing in vacuum were analyzed by X-ray diffraction (XRD), scanning electron microscopy, α-step, UV-visible spectra and electrochemical analysis. After annealing, the result of XRD indicated that all samples revealed mix-phase of AgIn5S8/AgInS2 structure. Thickness of annealed AIS thin films were in the range from 0.59 to 2.04 μm analyzed by α-step instrument. From PEC performance results, we found that the AIS film with dipping 3 cycles had better photocurrent density of 2.95 mA/cm2 at 1.0 V under 300 W Xe lamp illumination with the intensity of 100 mW/cm2. This value was about 2 times higher than dipping 4 cycles AIS film. Observed higher photocurrent was likely due to a suitable thickness and higher carrier concentration.
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Document Type: Short Communication
Publication date: April 1, 2015
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