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Effect of Dipping Cycle on Photoelectrochemical Characteristic of Mix-Phase AgIn5S8/AgInS2 Thin Films Prepared via Chemical Process

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Thin films of mix-phase AgIn5S8/AgInS2 (AIS) were deposited on Sn-doped In2O3 glass substrates via chemical bath deposition. Effect of dipping cycle (1 to 4) on structural, optical and photoelectrochemical (PEC) characteristics of AIS films were investigated. The as-obtained samples after annealing in vacuum were analyzed by X-ray diffraction (XRD), scanning electron microscopy, α-step, UV-visible spectra and electrochemical analysis. After annealing, the result of XRD indicated that all samples revealed mix-phase of AgIn5S8/AgInS2 structure. Thickness of annealed AIS thin films were in the range from 0.59 to 2.04 μm analyzed by α-step instrument. From PEC performance results, we found that the AIS film with dipping 3 cycles had better photocurrent density of 2.95 mA/cm2 at 1.0 V under 300 W Xe lamp illumination with the intensity of 100 mW/cm2. This value was about 2 times higher than dipping 4 cycles AIS film. Observed higher photocurrent was likely due to a suitable thickness and higher carrier concentration.
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Document Type: Short Communication

Publication date: April 1, 2015

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  • Nanoscience and Nanotechnology Letters (NNL) is a multidisciplinary peer-reviewed journal consolidating nanoscale research activities in all disciplines of science, engineering and medicine into a single and unique reference source. NNL provides the means for scientists, engineers, medical experts and technocrats to publish original short research articles as communications/letters of important new scientific and technological findings, encompassing the fundamental and applied research in all disciplines of the physical sciences, engineering and medicine.
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