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A Concise Numerical TID Radiation Model for n-MOSFET with Nano-Scaled LOCOS Isolation Under Zero Gate Bias

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This paper presents a numerical model which investigates the TID radiation effect on n-MOSFET with LOCOS isolation under zero bias condition. The model is based on equations of Poisson, carrier continuity and trapped holes rate, and reckon the surface potential effect in calculating trapped holes distribution in the gate oxide and field oxide during γ-ray radiation. The effective sheet density of trapped holes was obtained as a function of total dose and oxide thickness. A new approach which takes the trapped charges in the bird's beak as equivalent charges in the gate oxide was proposed to simplify the calculation. The irradiation experiment was carried out on both conventional and enclosed-gate n-MOSFETs without application of external voltage. Calculated results of both enclosed-gate MOSFETs and conventional MOSFETs after radiation agree well with experimental data.
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Document Type: Short Communication

Publication date: September 1, 2014

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  • Nanoscience and Nanotechnology Letters (NNL) is a multidisciplinary peer-reviewed journal consolidating nanoscale research activities in all disciplines of science, engineering and medicine into a single and unique reference source. NNL provides the means for scientists, engineers, medical experts and technocrats to publish original short research articles as communications/letters of important new scientific and technological findings, encompassing the fundamental and applied research in all disciplines of the physical sciences, engineering and medicine.
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