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Al Content–Dependent Resistive Switching in Al-Rich AlOxNy Thin Films

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Resistive switching can occur in Al-rich AlO x N y thin films depending on the Al content, i.e., the films with a small Al content exhibit resistive switching, but no resistive switch is observed in the films with a large Al content. The forming voltage, set/reset voltages, currents at the low- and high-resistance states, and conduction behavior of the low-resistance state are found to be dependent of the Al content. The phenomena can be explained by the changes in the complete filaments that consist of the metallic filaments formed by Al nanophases and the non-metallic filaments formed by oxygen vacancies.
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Document Type: Short Communication

Publication date: September 1, 2014

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  • Nanoscience and Nanotechnology Letters (NNL) is a multidisciplinary peer-reviewed journal consolidating nanoscale research activities in all disciplines of science, engineering and medicine into a single and unique reference source. NNL provides the means for scientists, engineers, medical experts and technocrats to publish original short research articles as communications/letters of important new scientific and technological findings, encompassing the fundamental and applied research in all disciplines of the physical sciences, engineering and medicine.
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