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Design Optimization of Nanoscale AlGaN/GaN HEMTs with Composite Metal Gate Structure for Millimeter-Wave Application

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A structure of AlGaN/GaN HEMT with metal composite gate is proposed to suppress short channel effects in nanoscale gate HEMT devices. Composite metal gate is made of a series of metal with different work functions. Through two dimensional numerical simulation, by using this structure, the drain-induced barrier lowering effect (DIBL) can be effectively alleviated. Comparing with single metal gate (SMG), the magnitude of DIBL is decreased by 16.7% and 18.8% when employing composite dual metal gate (DMG) and composite triple metal gate (TMG) respectively. As a result, the electrical performance of the device such as maximum drain current, transconductance and cut-off frequency have been improved.
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Document Type: Short Communication

Publication date: September 1, 2014

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  • Nanoscience and Nanotechnology Letters (NNL) is a multidisciplinary peer-reviewed journal consolidating nanoscale research activities in all disciplines of science, engineering and medicine into a single and unique reference source. NNL provides the means for scientists, engineers, medical experts and technocrats to publish original short research articles as communications/letters of important new scientific and technological findings, encompassing the fundamental and applied research in all disciplines of the physical sciences, engineering and medicine.
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