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A Novel High-Voltage GaN Current Aperture Vertical Electron Transistor with Polarization-Doped Current Blocking Layer

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A novel structure of GaN current aperture vertical electron transistor (CAVET) with polarization-doped current blocking layer (PD-CBL) is proposed and simulated in this paper. Comparing with the conventional p-GaN CBL, the p-type dopant activation efficiency in the AlGaN PD-CBL is enhanced significantly by graded Al mole fraction from 0 to r 1. High hole concentration, combined with the increased electron barrier height in the PD-CBL, lead to a decrease of the subthreshold leakage current and a drastic improvement of the breakdown voltage. Moreover, due to the suppression of the depletion region in the n-GaN buffer by the 2DEG formed at the PD-CBL/buffer interface, negligible negative impact on the ON-state resistance is observed for the PD-CAVETs with r 1 varying from 0 to 0.5.
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Document Type: Short Communication

Publication date: September 1, 2014

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  • Nanoscience and Nanotechnology Letters (NNL) is a multidisciplinary peer-reviewed journal consolidating nanoscale research activities in all disciplines of science, engineering and medicine into a single and unique reference source. NNL provides the means for scientists, engineers, medical experts and technocrats to publish original short research articles as communications/letters of important new scientific and technological findings, encompassing the fundamental and applied research in all disciplines of the physical sciences, engineering and medicine.
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