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Light-Induced Giant Capacitance Enhancement in LaAlO3/SrTiO3 Heterostructures

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Increase in the gate capacitance of field-effect transistor structure based on LaAlO3/SrTiO3 heterostructure is particularly important to the development of optoelectronic device. Here, we demonstrate giant positive capacitance enhancement in LAO/STO-based capacitor devices under light illumination at room temperature. The enhancement increases with the incident sub-bandgap light power or photon energy. The capacitance enhancement could be contributed to modification of electrostatic screening length in STO. Under light illumination, the electrons photoexcited from the mid-gap energy states could increase the screening effect, leading to the reduction of effective capacitor thickness and thereby capacitance enhancement.
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Document Type: Short Communication

Publication date: July 1, 2014

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  • Nanoscience and Nanotechnology Letters (NNL) is a multidisciplinary peer-reviewed journal consolidating nanoscale research activities in all disciplines of science, engineering and medicine into a single and unique reference source. NNL provides the means for scientists, engineers, medical experts and technocrats to publish original short research articles as communications/letters of important new scientific and technological findings, encompassing the fundamental and applied research in all disciplines of the physical sciences, engineering and medicine.
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