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Correlation and Model for RF Performance (fT ) Variability Due to Random Dopant Fluctuation in Nanoscale MOSFETs

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This letter considers RF performance particularly for cutoff frequency f T variability due to random dopant fluctuation (RDF) in nanoscale bulk-MOSFETs. The relationships of two variation parameters for f T, total gate capacitance C gg and trans-conductance gm , with dopant concentrations are established. Strong positive or negative correlations between C gg and gm are investigated at different gate bias voltages. A simple statistical model for accurately capturing fT variability is proposed based on the correlations. The model is in good agreement with HSPICE Monte Carlo simulation and the errors are less than 0.06% both for NMOS and PMOS. Detailed analysis also indicates fT variability due to RDF mainly results from gm variation rather than Cgg variation by RDF in the studied 65 nm MOSFETs.
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Document Type: Short Communication

Publication date: March 1, 2014

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  • Nanoscience and Nanotechnology Letters (NNL) is a multidisciplinary peer-reviewed journal consolidating nanoscale research activities in all disciplines of science, engineering and medicine into a single and unique reference source. NNL provides the means for scientists, engineers, medical experts and technocrats to publish original short research articles as communications/letters of important new scientific and technological findings, encompassing the fundamental and applied research in all disciplines of the physical sciences, engineering and medicine.
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