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Effect of Indium Content on Optical and Electrical Properties of In-Doped ZnO Films by RF Co-Sputtering

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The In-doped ZnO (IZO) films with wide ranging In contents of 0 to 29.4 at.% are co-sputtered on glass substrates at ambient temperature. A high electric resistivity (ρ) cannot be detected by four point probe measurement in pure ZnO films with no added In atoms. The ρ value reduces to 8.2 Ω-cm as 0.7 at.% In content is added to the ZnO film. It decreases significantly to 0.03 Ω-cm when the In content is increased to 2.2 at.%. Upon further raising the In content to 10.4 at.%, the ρ value of IZO film drops down to 7.0 × 10–3 Ω-cm. On the other hand, the transmittance of pure ZnO film without In doping is as high as 90%. When the In contents of 0.7 at.%, 2.2 at.%, and 10.4 at.% are added into the films, the transmittance continues to decrease to 83%, 81%, and 64%, respectively. Furthermore, both the resistivity and transmittance of the films decrease significantly to 8 × 10–5 Ω-cm and 18% respectively when a high In content of 29.4 at.% is added.
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Document Type: Research Article

Publication date: August 1, 2013

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  • Nanoscience and Nanotechnology Letters (NNL) is a multidisciplinary peer-reviewed journal consolidating nanoscale research activities in all disciplines of science, engineering and medicine into a single and unique reference source. NNL provides the means for scientists, engineers, medical experts and technocrats to publish original short research articles as communications/letters of important new scientific and technological findings, encompassing the fundamental and applied research in all disciplines of the physical sciences, engineering and medicine.
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