Electrical Bistabilities of Write-Once-Read-Many-Times Memory Devices Fabricated Utilizing Indium Tin Oxide Nanoparticles Embedded in a Poly 4-Vinyl Phenol Layer
A novel write-once-read-many-times (WORM) memory device, based on ITO nanoparticles and poly 4-vinyl phenol polymers core-cell hybrid and polystyrene, has been fabricated. The fabricated device showed high stable electrical bistability in theI –V characteristics
and could be used to perform WORM memory functions. Compared with existing memory devices of the same type, the novel device possessed higher maximum ON/OFF current ratio of more than 104, longer data-retention time and better storage stability.
Keywords: NANOPARTICLES; ORGANIC BISTABLE DEVICES (OBDS); WRITE-ONCE-READ-MANY-TIMES (WORM)
Document Type: Research Article
Publication date: 01 February 2013
- Nanoscience and Nanotechnology Letters (NNL) is a multidisciplinary peer-reviewed journal consolidating nanoscale research activities in all disciplines of science, engineering and medicine into a single and unique reference source. NNL provides the means for scientists, engineers, medical experts and technocrats to publish original short research articles as communications/letters of important new scientific and technological findings, encompassing the fundamental and applied research in all disciplines of the physical sciences, engineering and medicine.
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