Correlation Between Electrical Properties Degradation and Short-Channel Effects in Nano-Gate AlGaN/GaN High Electron Mobility Transistors
Based on the analysis of short-channel effects on Nano-gate AlGaN/GaN high electron mobility transistors (HEMTs), the key characteristics of device with gate-length ranging from 500 to 50 nm have been studied by numerical simulations. When the gate length (L g ) was reduced from 500 nm to 50 nm, a significant shift of threshold voltage, an increment of more than 3 orders of magnitude in sub-threshold current, a reduction of 39% of maximum DC transconductance and a reduction of 68% of f T ·L g product can be observed. The relationship between the aspect ratio (the ratio of gate-length and the thickness of barrier layer) and degeneration of electrical properties is discussed in detail.
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Document Type: Short Communication
Publication date: September 1, 2012
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- Nanoscience and Nanotechnology Letters (NNL) is a multidisciplinary peer-reviewed journal consolidating nanoscale research activities in all disciplines of science, engineering and medicine into a single and unique reference source. NNL provides the means for scientists, engineers, medical experts and technocrats to publish original short research articles as communications/letters of important new scientific and technological findings, encompassing the fundamental and applied research in all disciplines of the physical sciences, engineering and medicine.
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