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Electric Field Modulation by Introducing a Hk Dielectric Film of Tens of Nanometers in AlGaN/GaN HEMT

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A novel high-k (hk) dielectric based structure for AlGaN/GaN HEMT is investigated by numerical method. The simulation results show that such a structure can significantly suppress the electric field peak in device due to the induced polarization charges at the hk dielectric-semiconductor interface. It is demonstrated that, for a typical AlGaN/GaN HEMT with gate–drain spacing of 3 μm, the utilization of the hk dielectric based structure makes the electric field peak value at channel reduced to 14.6% while V D = 200 V. This novel technology provides an alternative choice besides metal field plate to increase breakdown voltage.
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Document Type: Short Communication

Publication date: September 1, 2012

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  • Nanoscience and Nanotechnology Letters (NNL) is a multidisciplinary peer-reviewed journal consolidating nanoscale research activities in all disciplines of science, engineering and medicine into a single and unique reference source. NNL provides the means for scientists, engineers, medical experts and technocrats to publish original short research articles as communications/letters of important new scientific and technological findings, encompassing the fundamental and applied research in all disciplines of the physical sciences, engineering and medicine.
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