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A Sub-1 V Bandgap Reference Based on Different Threshold MOSFETs Under 40 nm Process

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Based on different threshold MOSFETs in 40 nm CMOS process, a sub-1 V low-power bandgap voltage reference with second-order temperature compensation is designed. The reference generator employs the characteristics of the difference between gate and source voltages (ΔVGS ) of a high threshold NMOS transistor operating in the subthreshold region and a normal threshold NMOS transistor operating in the saturation region to achieve second-order temperature compensation. Simulation results show that a temperature coefficient of 2.3 ppm/°C at 0.9 V is achieved from −40 °C to 85 °C, and the reference generator operates under supply voltage ranging from 0.9 to 1.5 V with a power consumption lower than 1.2 μW.
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Document Type: Short Communication

Publication date: September 1, 2012

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  • Nanoscience and Nanotechnology Letters (NNL) is a multidisciplinary peer-reviewed journal consolidating nanoscale research activities in all disciplines of science, engineering and medicine into a single and unique reference source. NNL provides the means for scientists, engineers, medical experts and technocrats to publish original short research articles as communications/letters of important new scientific and technological findings, encompassing the fundamental and applied research in all disciplines of the physical sciences, engineering and medicine.
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