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High Quality Al2O3 Dielectric Films Deposited by Pulsed-DC Reactive Sputtering Technique for High-k Applications

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This paper presents high quality high-k Al2O3 dielectric films deposited by reactive sputtering technique with pulsed-DC (p-DC) power supply source. Process parameters are optimized to obtain Al2O3 dielectric film with high effective breakdown field (E BD) of 18.07 MV/cm and dielectric constant (k) of 8.15 with an equivalent oxide thickness (EOT) of 8.59 nm, suitable for inter-poly dielectric (IPD) of floating gate flash memory applications. X-ray photoelectron spectroscopy (XPS) measure- ment is performed for films deposited with different gas flow ratios and it is observed that the film stoichiometry can be changed by varying the gas flow ratio. A low surface roughness of 3.2 Å is observed by atomic force microscopy (AFM) measurement on these films. Al2O3 films deposited at high power are found to be interesting for surface passivation of p-type silicon for solar cell applications.
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Document Type: Short Communication

Publication date: June 1, 2012

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  • Nanoscience and Nanotechnology Letters (NNL) is a multidisciplinary peer-reviewed journal consolidating nanoscale research activities in all disciplines of science, engineering and medicine into a single and unique reference source. NNL provides the means for scientists, engineers, medical experts and technocrats to publish original short research articles as communications/letters of important new scientific and technological findings, encompassing the fundamental and applied research in all disciplines of the physical sciences, engineering and medicine.
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