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Magnetic and Transport Properties of n-type Fe Doped In2O3 and ZnO Films

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Transition metals (TM) doped oxides films are promising in dilute magnetic semiconductors applications. However, the hindrance of the further progress is that the mechanism of ferromagnetism is still not clear. Several controversial results have been reported. In this work, we reported that room temperature ferromagnetism can be found in Fe doped In2O3 films. Room temperature ferromagnetism can be correlated with the carrier concentrations of Fe doped In2O3 films. The most conductive (In0.90, Fe0.10)2O3 film with carrier concentration of 5.78 × 1019 cm–3 showed the highest saturation magnetization (8.2 emu/cm3). The mechanism can be explained by the carrier mediated ferromagnetism. The intrinsic ferromagnetism of Fe doped In2O3 films can be tuned by Fe concentrations and oxygen vacancies. However, Fe doped ZnO films did not possess ferromagnetism at room temperature due to their low carrier concentrations (in the order of 1018 cm3).
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Document Type: Short Communication

Publication date: June 1, 2012

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  • Nanoscience and Nanotechnology Letters (NNL) is a multidisciplinary peer-reviewed journal consolidating nanoscale research activities in all disciplines of science, engineering and medicine into a single and unique reference source. NNL provides the means for scientists, engineers, medical experts and technocrats to publish original short research articles as communications/letters of important new scientific and technological findings, encompassing the fundamental and applied research in all disciplines of the physical sciences, engineering and medicine.
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