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Electron Paramagnetic Resonance Spectroscopic Investigation of Manganese Doping in ZnL (L = O, S, Se, Te) Nanocrystals

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Intentional doping of transition metal ion impurities into semiconductor nanocrystals can alter the properties of these nanoscale materials, and the fact that doped nanocrystals can address key problems in applications from solar cells to bioimaging has stimulated research in this direction. The major dopant in the II–VI semiconductors is manganese. For practical applications, it is important for the dopants to remain confined within the nanocrystal, to enhance its interactions with charge and spin carriers. However, Mn-doping inside the host semiconductor lattice is a challenge, since the impurities tend to be expelled from the lattice to the nanocrystal surface or form Mn2+–Mn2+ clusters. Electron paramagnetic resonance (EPR) spectroscopy acts as an effective tool to probe the location of manganese in the diluted magnetic semiconductors (DMSs). This review deals with the various facets of manganese localization inside ZnO, ZnS, ZnSe, and ZnTe nanocrystals, as probed by EPR measurements.
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Keywords: DILUTED MAGNETIC SEMICONDUCTOR; DMS; EPR; MANGANESE DOPING; NANOCRYSTAL

Document Type: Review Article

Publication date: August 1, 2011

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  • Nanoscience and Nanotechnology Letters (NNL) is a multidisciplinary peer-reviewed journal consolidating nanoscale research activities in all disciplines of science, engineering and medicine into a single and unique reference source. NNL provides the means for scientists, engineers, medical experts and technocrats to publish original short research articles as communications/letters of important new scientific and technological findings, encompassing the fundamental and applied research in all disciplines of the physical sciences, engineering and medicine.
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