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Epitaxial Graphene Growth on α-SiC: Probing the Effect of Surface Orientation

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We review the results of growing few layer graphene on α-SiC with different surface orientations. To this end we have used successively a pure {000-1} C face, a 8°-off one, a nonpolar {11–20} surface and, finally, a 8°-off Si face and a pure (exactly {0001}-oriented) Si one. Without any need for complex hydrogen annealing, we have shown that a pure C or a 8°-off C or even a pure {11–20} surface allows the growth of single layer epitaxial graphene sheets that are strain-free, p-type, low doped and exhibit reasonably high carrier mobility. This is not the case on pure Si or 8°-off Si faces on which strained material is constantly found with heavy n-type doping and low carrier mobility.
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Keywords: EPITAXIAL GRAPHENE; GRAPHENE; QUANTUM HALL EFFECT; RAMAN; SIC

Document Type: Short Communication

Publication date: February 1, 2011

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  • Nanoscience and Nanotechnology Letters (NNL) is a multidisciplinary peer-reviewed journal consolidating nanoscale research activities in all disciplines of science, engineering and medicine into a single and unique reference source. NNL provides the means for scientists, engineers, medical experts and technocrats to publish original short research articles as communications/letters of important new scientific and technological findings, encompassing the fundamental and applied research in all disciplines of the physical sciences, engineering and medicine.
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