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Nanocrystalline Metal Oxide Gate AlGaN/GaN HEMT for Detection of CO Gas

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This paper presents a robust sensor to detect low concentration <1 ppm) of CO gas. The sensor is based on AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistor (MOSHEMT) with a non-conventional gate structure. The performance of the device has been simulated based on the charge control physics of AlGaN/GaN heterostructure transistor. Large sensitivities and widely linear characteristics are obtained for the AlGaN/GaN device based sensor assuming ideal gas-surface kinetics which can be approximated by the proposed gate structure. The sensor generates 0.8 μA of current for 0.5 ppm concentration of CO. The sensor shows linear characteristics for concentration of 1000 ppm CO. The effects of varying aspect ratio on total changes in current, sensitivity and linearity of the device have been simulated.
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Keywords: ALGAN/GAN HEMT; CO DETECTION; EXTREME ENVIRONMENT SENSOR; NANOCRYSTALLINE SNO2; SUB-PPM DETECTION

Document Type: Short Communication

Publication date: June 1, 2010

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  • Nanoscience and Nanotechnology Letters (NNL) is a multidisciplinary peer-reviewed journal consolidating nanoscale research activities in all disciplines of science, engineering and medicine into a single and unique reference source. NNL provides the means for scientists, engineers, medical experts and technocrats to publish original short research articles as communications/letters of important new scientific and technological findings, encompassing the fundamental and applied research in all disciplines of the physical sciences, engineering and medicine.
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