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AlGaN/GaN High Electron Mobility Transistor Based Sensors for Environmental and Bio-Applications

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A promising sensing technology utilizing AlGaN/GaN high electron mobility transistors (HEMTs) has been developed to analyze a wide variety of environmental and biological gases and liquids. The conducting 2DEG channel of GaN/AlGaN HEMTs is very close to the surface and extremely sensitive to adsorption of analytes. Examples of detecting mercury ions, Perkinsus sp. protozoan pathogens of marine molluscs, lactic acid, and an endocrine disrupter biomarker (vitellogenin) are discussed in this paper. Detection limits of 10–7 M, 5 μg/ml and 167 nM for mercury ions, vitellogein and lactic acid, respectively, were achieved.
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Document Type: Short Communication

Publication date: June 1, 2010

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  • Nanoscience and Nanotechnology Letters (NNL) is a multidisciplinary peer-reviewed journal consolidating nanoscale research activities in all disciplines of science, engineering and medicine into a single and unique reference source. NNL provides the means for scientists, engineers, medical experts and technocrats to publish original short research articles as communications/letters of important new scientific and technological findings, encompassing the fundamental and applied research in all disciplines of the physical sciences, engineering and medicine.
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