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Free Standing Nanocrossbar Arrays with Molecular Throughput

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We report a new approach for fabricating vacant nanocrossbar arrays using a combination of lithography and selective chemical etch. Two parallel arrays of gold wires are lithographically patterned orthogonal to each other with a chromium layer (2–5 nm thick) sandwiched between the wire arrays. A silicon oxide mesh is sputtered over the metal ensemble leaving the crossing points free of the oxide layer. The chromium layer is subsequently removed via selective chemical etch leaving a gold architecture with vertical separations that are on the order of a few nanometers. The silicon oxide mesh anchors the gold wires in place creating a robust nanoarchitecture. The nanogaps can be filled with fluids resulting in a change of the junction's resistance. The variability in the vertical separations between the wires within an array is only a few Angstroms. These results demonstrate that molecular-sized gaps can be created without the use of a molecular template.
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Keywords: CHEMICAL ETCH; ELECTRON TUNNELING; NANOGAP

Document Type: Short Communication

Publication date: June 1, 2010

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  • Nanoscience and Nanotechnology Letters (NNL) is a multidisciplinary peer-reviewed journal consolidating nanoscale research activities in all disciplines of science, engineering and medicine into a single and unique reference source. NNL provides the means for scientists, engineers, medical experts and technocrats to publish original short research articles as communications/letters of important new scientific and technological findings, encompassing the fundamental and applied research in all disciplines of the physical sciences, engineering and medicine.
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