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Open Access Fabrication and properties of pn diodes with hybrid 2D layers: Graphene/MoS2

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The combination of two-dimensional (2D) material has been studied by many research groups to develop an important component of the device. Graphene is a well-known 2D material which does not have a bandgap. After the intensive study, other 2D materials have been also focused by many researchers. One of the materials is Molybdenum disulfide (MoS2) which is currently the most promising 2D semiconductor material. In this paper, we synthesize hybrid layer which consists of graphene and MoS2 to fabricate a diode and report the synthesis method of the hybrid film and the electrical properties of the device. Graphene is synthesized by chemical vapor deposition (CVD) method and transfer to a target substrate (Si/SiO2). And then MoS2 is directly deposited on the graphene layer using Mo(CO)6 and H2S gases. The fabricated device shows pn diode property because graphene and MoS2 have p-type and n-type properties, respectively. The threshold voltage of the device is about 2.5 V and the slope of the IV curve is decreased by increasing the distance between electrode. Each electrode has the same distance (0.5 mm).

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Document Type: Short Communication

Publication date: June 1, 2018

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  • Materials Express is a peer-reviewed multidisciplinary journal reporting emerging researches on materials science, engineering, technology and biology. Cutting-edge researches on the synthesis, characterization, properties, and applications of a very wide range of materials are covered for broad readership; from physical sciences to life sciences. In particular, the journal aims to report advanced materials with interesting electronic, magnetic, optical, mechanical and catalytic properties for industrial applications.
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