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Open Access Qualification of silicon based oxide and nitride films for metal-insulator-metal capacitors

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In this work, recipes for plasma enhanced chemically vapour deposited (PECVD) dielectric thin films of silicon dioxide (SiO2) and silicon nitride (Si3N4) were prepared. Each layer was deposited, characterized and verified for reproducibility. Revealed characterization results qualify these films for insulator in high density reliable metal-insulator-metal (MIM) capacitor. MIM capacitors array were successfully developed using stacked SiO2–Si3N4–SiO2 (ONO) thin films and characterized. Defects, voids and uniformity of deposited thin films were checked. Various types of conduction mechanism in ONO studied. The ONO dielectric film has high dielectric constant and breakdown voltage. It was observed that MIM capacitors have high precision and stable capacitance value in wide range of operating conditions. Ultra large scale integrated circuit (ULSIC) requires these MIM capacitors in various applications. Micro-electro-mechanical system (MEMS) uses these ONO films in RF switches.

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Keywords: MEMS; MIM CAPACITORS; ONO; PECVD; RESIDUAL STRESS; ULSICS

Document Type: Research Article

Publication date: June 1, 2018

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  • Materials Express is a peer-reviewed multidisciplinary journal reporting emerging researches on materials science, engineering, technology and biology. Cutting-edge researches on the synthesis, characterization, properties, and applications of a very wide range of materials are covered for broad readership; from physical sciences to life sciences. In particular, the journal aims to report advanced materials with interesting electronic, magnetic, optical, mechanical and catalytic properties for industrial applications.
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