Qualification of silicon based oxide and nitride films for metal-insulator-metal capacitors
In this work, recipes for plasma enhanced chemically vapour deposited (PECVD) dielectric thin films of silicon dioxide (SiO2) and silicon nitride (Si3N4) were prepared. Each layer was deposited, characterized and verified for reproducibility. Revealed characterization results qualify these films for insulator in high density reliable metal-insulator-metal (MIM) capacitor. MIM capacitors array were successfully developed using stacked SiO2–Si3N4–SiO2 (ONO) thin films and characterized. Defects, voids and uniformity of deposited thin films were checked. Various types of conduction mechanism in ONO studied. The ONO dielectric film has high dielectric constant and breakdown voltage. It was observed that MIM capacitors have high precision and stable capacitance value in wide range of operating conditions. Ultra large scale integrated circuit (ULSIC) requires these MIM capacitors in various applications. Micro-electro-mechanical system (MEMS) uses these ONO films in RF switches.
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Document Type: Research Article
Publication date: June 1, 2018
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