Effect of γ-irradiation on electrical transport properties of ZnTe thin films composed of nanostructures
In the present paper, we report the synthesis and characterization of ZnTe nanoparticle films. Effects of γ-radiation on structural, optical and electrical properties of ZnTe nanoparticle films have been analyzed and explained on scientific grounds. From X-ray diffraction analysis, it is established that γ-radiation induces the polycrystallinity in amorphous ZnTe nanoparticles, which increases with increase of γ-radiation dose. On the other hand morphological and microstructural analysis suggest that irradiation γ-radiation leading the nanoparticles to grow big in size. Nanorods like structures have also been observed in the sample irradiated with higher dose of γ-radiation. From electrical investigation of as prepared and γ-irradiated ZnTe nanoparticles films, it is confirmed that γ-irradiation drastically affect the electrical properties of ZnTe nanoparticles thin films. On the basis of resistance versus temperature analysis in the range from 300 to 400 K, it has been inferred that the as-prepared sample shows two types of conduction mechanisms within this temperature range. The electrical transport takes place via variable range hopping for the temperature range (300–370 K), whereas the hopping within localized states dominates for the temperature (370–400 K). For the samples exposed to different doses of γ-radiation (25, 50 and 75 kGy), the electrical conduction is via hopping within band tails of localized states. Optical absorption studies suggest a direct band gap of 2.29 eV for as-prepared nanoparticles, which increases to 2.43 eV after γ-irradiation.
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Document Type: Research Article
Publication date: June 1, 2017
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