Efficiency enhancement of GaN-based green light-emitting diode with PN-doped quantum barriers
In this work, a GaN-based green light-emitting diode (LED) with PN-doped quantum barriers (PNBs) was proposed to replace conventional LED with undoped barriers (UBs). We investigate the optical and electrical properties of this LED structure by experiments and simulations. According to the experimental results, the light intensity of LED with PNBs increases by 20.2% compared to conventional LED with UBs. The peak wavelength of LED decreases from 521.8 nm to 505.9 nm by replacing UBs with PNBs. The calculated results indicate that the designed PNBs can effectively improve the light power and reduce the capacitance of the GaN-based green LEDs. The efficiency improvement is attributed to improvement of the radiative recombination rate within the active region. The simulation data demonstrate that PNBs can effectively suppress the electric field intensity in the wells and enhance the electron–hole wave function overlap. The capacitance of LED with PNBs decreases by 37% compared to conventional LEDs.
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Document Type: Short Communication
Publication date: December 1, 2016
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