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Open Access Modification of strain relaxation process by Si doping in metamorphic Al(Ga)InAs layers grown on GaAs

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We investigated the effects of Si doping on the dislocation movements in the compositionally step-graded Al(Ga)InAs buffers grown by metal-organic chemical vapor deposition (MOCVD) on (001) GaAs substrates with 7° miscut toward (111)A. It is found that Si doping suppresses the In segregation and the formation of phase separation in the Al(Ga)InAs buffers to reduce the surface roughness and the threading dislocation density in InP cap layer. In particular, Si substitutes group III atoms as n-type doping for incorporating into B-type step along the [110] direction and the effect of Si incorporation on the movement of β dislocations is obvious, which consequently promotes β dislocations to glide in the interface and reduces the β threading dislocation densities. While Si impurity has a great ability to lock α dislocations on the (111) slip planes and eventually change the tilt in the [110] direction. Since doping is essential for many types of optoelectronic devices, these results are valuable for improving the material properties and performance of metamorphic devices.

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Document Type: Research Article

Publication date: December 1, 2016

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  • Materials Express is a peer-reviewed multidisciplinary journal reporting emerging researches on materials science, engineering, technology and biology. Cutting-edge researches on the synthesis, characterization, properties, and applications of a very wide range of materials are covered for broad readership; from physical sciences to life sciences. In particular, the journal aims to report advanced materials with interesting electronic, magnetic, optical, mechanical and catalytic properties for industrial applications.
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