Effect of surficial length on transparent conductor-coated Si pillar arrays
We report an indium-tin-oxide (ITO) coated silicon (Si) pillar arrays heterojunction device for providing high performing photoresponse. The photolithography is used to fabricate the periodic patterns of Si pillar arrays with two different widths/periods: 2 μm/5 μm and 2 μm/7 μm at constant depth (1.1 μm). A transparent and antireflective ITO coated Si pillar arrays are achieved at a room temperature and then subjected to rapid thermal process at 300 °C for 10 min. The reflectance of 2/5 pillar patterns revealed the lower value of 14.4% than that of 2/7 pillar patterns (reflectance of 25.8%). The photoresponse of fabricated heterojunction device is enhanced in response with surficial length. The highest photoresponse ratios of 1656% and 1556% are observed for prepared devices at a wavelength of 900 nm. These results confirmed that the improved photoresponse is observed by surficial length enhancement. Therefore, the fabricated ITO coated Si heterojunction play an important role in photovoltaic devices.
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Document Type: Short Communication
Publication date: June 1, 2015
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