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Open Access Performance enhancement in chemical vapor deposition graphene field-effect transistors by high-κ dielectric screening

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The transport properties of CVD graphene-based field-effect transistors (GFETs) before and after introducing high-κ dimethyl sulfoxide (DMSO) were investigated. The results show that after introducing DMSO, the performance of GFETs was significantly improved: the maximum drain current ID max, the maximum transconductance gm max, and the field-effect mobility increase by 2.5, 24, and 23 times, respectively. The mechanism for the performance enhancement by high-κ dielectric was analyzed by Raman spectroscopy and transport measurements, and both are consistent with each other.

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Keywords: CHEMICAL VAPOR DEPOSITION; GRAPHENE; HIGH-κ DIELECTRIC; RAMAN SPECTROSCOPY; SCREENING

Document Type: Short Communication

Publication date: February 1, 2014

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  • Materials Express is a peer-reviewed multidisciplinary journal reporting emerging researches on materials science, engineering, technology and biology. Cutting-edge researches on the synthesis, characterization, properties, and applications of a very wide range of materials are covered for broad readership; from physical sciences to life sciences. In particular, the journal aims to report advanced materials with interesting electronic, magnetic, optical, mechanical and catalytic properties for industrial applications.
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