Fabrication of Highly Dense Nanoholes by Self-Assembled Gallium Droplet on Silicon Surface
We report the fabrication of nanoholes on silicon surface by exploiting the solubility of silicon in gallium by local droplet etching. Nanometer-sized gallium droplets yield nanoholes when annealed in ultrahigh vacuum at moderate temperatures (∼ 500°C) without affecting the other regions. High vacuum and moderate annealing temperatures are key parameters to obtain well-defined nanoholes with diameter comparable to that of Ga droplets. Selfassembly of Ga droplet leads to a nanohole density of 4–8 × 1010/cm2 .
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Document Type: Research Article
Publication date: September 1, 2012
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