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Open Access Fabrication of Highly Dense Nanoholes by Self-Assembled Gallium Droplet on Silicon Surface

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We report the fabrication of nanoholes on silicon surface by exploiting the solubility of silicon in gallium by local droplet etching. Nanometer-sized gallium droplets yield nanoholes when annealed in ultrahigh vacuum at moderate temperatures (∼ 500°C) without affecting the other regions. High vacuum and moderate annealing temperatures are key parameters to obtain well-defined nanoholes with diameter comparable to that of Ga droplets. Selfassembly of Ga droplet leads to a nanohole density of 4–8 × 1010/cm2 .

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Keywords: GA DROPLETS; NANOHOLE FABRICATION; SELF-ASSEMBLY OF; SI ETCHING

Document Type: Research Article

Publication date: September 1, 2012

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  • Materials Express is a peer-reviewed multidisciplinary journal reporting emerging researches on materials science, engineering, technology and biology. Cutting-edge researches on the synthesis, characterization, properties, and applications of a very wide range of materials are covered for broad readership; from physical sciences to life sciences. In particular, the journal aims to report advanced materials with interesting electronic, magnetic, optical, mechanical and catalytic properties for industrial applications.
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