Air-Free Fabrication and Investigation of Effect of Air Exposure on Carbon Nanotube Field-Effect Transistors
An air-free system which enables experiments from carbon nanotube (CNT) growth to device characterization without an effect of ambient air was constructed. It was clarified by using the system that an origin of instability of n-type conduction of carbon nanotube field-effect transistors (CNTFETs) with Al contacts in air was not attributed to oxidation of the Al contacts, but attributed to adsorption of oxygen. The present system was shown to be useful for investigating the effect of air on intrinsic electrical properties of CNTFETs with Al contacts, investigating the effect of passivation, and fabricating CNT p–n junction with Au(p)/Al(n) asymmetric electrodes.
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Document Type: Research Article
Publication date: December 1, 2011
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