Over the last few years silicon nanowires have come under intensive research due to their promising physical properties and potential as active materials in future electronic and optoelectronic applications. This article reviews various bottom-up growth methods of silicon nanowires.
Various catalysts, including gold and other metals, as well as non-catalyst initiated growth methods are discussed in detail by comparing recipes including important parameters such as growth temperature, catalyst deposition methods, silicon nanowires diameter obtained, surface quality etc.
This is expected to allow for an easier selection of a suitable growth method for a desired application. In addition, this article briefly reviews some of the developments in the field of silicon nanowire electronics and optoelectronics, including theoretical and experimental determination
of charge carrier mobilities, visible photoluminescence, as well as a few recent examples of photodetectors and solar cells using silicon nanowires.
No Supplementary Data.
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CATALYST FREE GROWTH;
SILICON NANOWIRE FIELD EFFECT TRANSISTORS;
SILICON NANOWIRE GROWTH;
Document Type: Review Article
June 1, 2011
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Materials Express is a peer-reviewed multidisciplinary journal reporting emerging researches on materials science, engineering, technology and biology. Cutting-edge researches on the synthesis, characterization, properties, and applications of a very wide range of materials are covered for broad readership; from physical sciences to life sciences. In particular, the journal aims to report advanced materials with interesting electronic, magnetic, optical, mechanical and catalytic properties for industrial applications.
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