Thermally-Aware Modeling and Performance Analysis of Mixed-MWCNTB as Very Large Scale Integrated Interconnects Material for Nano-Electronic Integrated Circuits Design
This paper presents the performance of thermally-aware Mixed-MWCNTB (MMB) as VLSI interconnects material for nano-scaled technology nodes. A thermally aware multiple conductor circuit (MCC) model of MMB structure as interconnect material for nano-scaled technology nodes has been proposed. From proposed MCC, a thermally aware equivalent single conductor (ESC) model for MMB structure is also presented. The performance in terms of delay and power delay product (PDP) of the proposed MMB structure at a variable temperature range (200–500 K) has been evaluated and analyzed at various technology nodes (32, 22 and 16 nm) for global interconnect length (1000 μm). Further, the similar analysis has been carried out for copper interconnects and the results are compared with proposed MMB structure. The results indicated that MMB structure offers less resistance as compared to copper interconnects. The comparative analysis shows that with increasing temperature, the various performance parameters such as delay and PDP are also increasing for all the technology nodes. It is revealed from the results that MMB structure presents outstanding performance under variable thermal conditions as compared to copper. As a consequence, the MMB structure can be considered as an alternative to replace the conventional copper as future VLSI interconnect material for high performance nano-electronics integrated circuits design.
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Document Type: Research Article
Publication date: September 1, 2019
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- Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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