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Realization of Grounded Active Inductor Circuit with Only MOSFETs

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In this paper, a grounded MOS only active inductor circuit is presented. The grounded active inductor circuit has a minimum number of MOS transistors. As a result, this presented active inductor circuit provides small chip area and low power consumption as 315 μW. Also, the proposed circuit has tunability property and the active inductor can operate in a wide frequency range between 10 MHz to 500 MHz. To analyze the performance of the proposed grounded active inductor, a second-order notch filter structure is realized. The center frequency of the notch filter is selected as 200 MHz and the noise voltage value is calculated as 8.37 nV/√Hz for this frequency. The designed active inductor and filter structures are simulated by LTSPICE using 0.18 μm CMOS process parameters.
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Document Type: Research Article

Publication date: August 1, 2019

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  • Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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