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Annealing Effects on Properties of Se(1–x)Sb x Nano Crystalline Thin Films

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Se(1–x)Sb x Heterostructure of 200 nm Thin Films with different stoichiometry ratio (x = 0.25, 0.50, 0.80) of Se:Sb deposited on glass plate substrate by thermal evaporation method under the vacuum of about 3*10–5 torr using vacuum coating unit under the deposition rate of 10 Å/sec. It was observed that optical band gap decreases exponentially with Increases the Photon Energy (E g). It is also observed that absorption coefficient in Optical Band Gap decreases exponentially with increases wavelength of Photon (λ nm). Prepared thin films deposited on properly cleaned glass substrate at different stoichiometry ratio (75:25, 50:50, 20:80) at constant thickness of 200 nm. Nano Crystalline thin films were kept at without annealed, annealed at 150 °C and 200 °C to examine the effect of annealing in recrystallization. At without annealing prepared thin films were found amorphous in nature. Samples were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM) to obtain comprehensive and consistent microstructural information. UV-VIS NIR Spectrometer is used to measure Optical properties of thin films. X-ray Photo-Electron Spectroscopy (XPS) was used to measure the elemental composition of thin films. A picosecond laser pump-probe system was used to investigate the phase-change time between amorphous and crystalline states, by measuring the reflectivity of the material. Raman Spectra Analysis technique used to observe and analysis optical spectra to examine the surface morphology of thin films.
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Keywords: PHOTO-ELECTRON SPECTROSCOPY; UV-VIS NIR SPECTROMETER; VACUUM COATING UNIT

Document Type: Research Article

Publication date: August 1, 2019

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  • Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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