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Gamma Induced Structural and Optical Changes of TiO2 Thin Film Deposited by Atomic Layer Deposition

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The thin films of 100 nm thickness titanium dioxide (TiO2) were deposited on the glass substrate by using atomic layer deposition (ALD). The influence of the gamma (γ) irradiation on structural and optical properties of nanostructural TiO2 films was studied. The samples were irradiated with 60Co source from 25–100 kGy. The X-ray diffraction and photoluminescence study confirmed the changes in the crystallinity after γ irradiation. The optical results were done by UV-vis-spectrophotometer and diffuse reflectance. It is observed that the optical band gap value of TiO2 thin films decreases with increasing gamma dose.
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Document Type: Research Article

Publication date: November 1, 2018

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  • Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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