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Effect of Radio Frequency Power on the Properties of Al-Doped ZnO (AZO) Thin Films and Their Application to Cu2ZnSn(S,Se)4 Thin-Film Solar Cells

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Cu2ZnSn(S,Se)4 (CZTSSe) has emerged as an attractive candidate to replace CdTe, CIGS, and silicon-based thin-film solar cells (TFSCs). In the present study, the Al-doped ZnO (AZO) thin films that serve as a window layer in CZTSSe TFSCs were optimized to improve the device efficiency. AZO thin films were deposited on a soda lime glass (SLG) substrate using radio frequency (RF) magnetron sputtering with the varying of the RF sputtering power during the deposition. The influence of different RF-power values on the structural, optical, and electrical properties of the AZO thin films, as well as the CZTSSe TFSC efficiency, were investigated. All of the deposited thin films showed a uniform microstructure with a transmittance of more than 90% in the visible region, although they possess comparable bandgap and resistivity differences. Especially, the AZO thin films that were deposited at 50 and 70 W showed high optical bandgap energies of ∼3.67 eV, with a transmittance of ∼90% in the visible region. Alternatively, the AZO thin films that were deposited at 50 W showed improved electrical properties with the lowest resistivity of 4.36 × 10–4 Ωcm, a higher carrier concentration of 5.95 × 1020 cm–3, a high mobility of 24.06 cm2v–1s–1, and a lower sheet resistance of 6.4 Ω/SQ. This led to the enhanced device efficiency of the CZTSSe TFSCs with the 50-W-deposited AZO window layer owing to its outstanding optoelectronic properties. Specifically, the improved open-circuit voltage (V OC) resulted in a high power conversion efficiency (PCE) of 5.53% for the CZTSSe TFSCs. These results signify the effectiveness of AZO as a highly promising TCO for the TFSC application.
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Keywords: AL-DOPED ZNO (AZO); CZTSSE; SPUTTERING; THIN-FILM SOLAR CELLS

Document Type: Research Article

Publication date: November 1, 2018

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  • Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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