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Effect of Ambients on Rear Al Metallization in Silicon Solar Cells

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Al rear contacts using paste in screen printed solar cells requires not only good passivation and high reflectance, but also a large process window compatible with the front Ag metallization temperature. In this study, the structural and electrical properties of the back surface field formed during the metallization process with different firing ambients were investigated. Also, the mechanism of burn-out of organic materials in Al paste was suggested. In N2 ambient annealing condition, back surface fields were poorly formed which led high backsurface recombination velocity compared to O2 and air ambients annealing. From the thermogravimetric analysis, it is considered that O2 ambient enhanced the side group elimination during burn-out process. Therefore, O2 ambient annealing rear contact showed mederated metal resistance even at the lower peak firing temperature. Over 780 °C, the Al bulk resistivity annealed at N2 ambient showed the lowest values; however, over-shrinkage of Al was observed. The optimized temperature with oxygen flow shows an absolute efficiency of 19.1% in the PC1D simulation.
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Keywords: AL REAR METALLIZATION; BACK SURFACE FIELD; BACK SURFACE RECOMBINATION VELOCITY; CRYSTALLINE SILICON SOLAR CELLS; FIRING PROCESS

Document Type: Research Article

Publication date: November 1, 2018

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  • Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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