Impact of Temperature and Fixed Oxide Charge Variation on Performance of Gate-on-Source/Channel SOI TFET and Its Circuit Application
In this paper, the effects of temperature and fixed oxide charge variability on gate-on-source/channel SOI TFET are investigated. At first, a general comparison is drawn among a conventional SOI TFET, gate-on-source only TFET and gate-on-source/channel TFET, and extended to the variation of temperature and fixed oxide charge. The gate-on-source/channel TFET exhibits higher on current and on-off current ratio than gate-on-source and conventional SOI TFET. The response of the proposed device with the change of, buried oxide thickness, back gate voltage, and drain voltage in associated with temperature variability is reported. The positive oxide charge degrades the on current and improves ambipolarity whereas the negative oxide charge improves on current and degrades ambipolarity. The combined effect of temperature and fixed oxide charge is studied. The effect of temperature is observed on the capacitance and cut off frequency of the proposed device. With increasing temperature DIBL degrades and decreased cutoff frequency is observed. Moreover, the effect of positive and negative gate oxide charge in gate leakage current is studied. Comparison of p-TFET and n-TFET is portrayed with respect to temperature and oxide charge variability effect. Finally, the effect of temperature on the performance of inverter for the proposed TFET is deliberated in detail.
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Document Type: Research Article
Publication date: November 1, 2018
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- Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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