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Characteristics of a Diode with Various Gas Injection Ratios for c-Si Solar Cells

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Doping is an important process for high-efficiency crystalline silicon (c-Si) solar cells. The optimization of doping is expected to increase the efficiency of the solar cell by reducing surface recombination and increasing carrier-collection rates. In this study, we analyzed an emitter layer formed under pre-deposition gas ratios. In dark IV measurements, as the ideality factor of the space-charge region (SCR) is closer to 1, the internal defects of the pn junction are reduced, thereby increasing the carrier lifetime and efficiency of the solar cells. By varying gas-injection ratios, we obtained a high carrier lifetime of 15.9 μs at a POCl3 and O2 gas flow rates of 800 sccm and 500 sccm respectively. Furthermore, the SCR ideality factor was found to be 1.42 and saturation current was 1.819 × 10–3 A/cm 2.
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Keywords: C-SI SOLAR CELL; CARRIER; DOPING; EMITTER; RECOMBINATION

Document Type: Research Article

Publication date: November 1, 2018

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  • Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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