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Effect of Three Different Complexing Agents on the Deposition of ZnS Buffer Layer in Copper Indium Gallium Selenide Solar Cell

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Cadmium sulfide (CdS) buffer layer has been replaced with zinc sulfide (ZnS) thin film owing to toxicity. ZnS thin films were fabricated by using chemical bath deposition (CBD). The characteristics of ZnS thin films are closely related to the use of complexing agents to control the concentration of Zn2+ ions during the deposition process. The optimal conditions for the fabrication of ZnS thin film were determined by adjusting the concentrations of ethylenediamine tetra acetate acid, hexamethylene tetramine, and sodium citrate. The morphology of the fabricated ZnS thin film was examined using field-emission scanning electron microscopy. The measurement was carried out using ultraviolet-visible spectroscopy and the light penetration was measured at 300∼800 nm using a tungsten lamp. The best ZnS thin film with a dense surface was prepared using sodium citrate complexing agent.
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Keywords: CHEMICAL BATH DEPOSITION; COMPLEXING AGENT; ETHYLENEDIAMINE TETRA ACETATE ACID; HEXAMETHYLENE TETRAMINE; SODIUM CITRATE; ZNS THIN FILM

Document Type: Research Article

Publication date: November 1, 2018

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  • Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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