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Germanium Photodetection Improvements Using InP Bragg Grating

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Complete optoelectronic modeling of photovoltaic devices is necessary to accurately determine performance and guide optimization. The key quantities of interest to the optical and electrical component design are explained, including sources of illumination, the conversion of electromagnetic radiation to electrical current, and measures of efficiency. In this work, a simulation has been performed to characterize the Germanium photodetector. By incorporating an Indiumphosphide-based Bragg grating, the overall performance of Germanium photodetector is improved compared to commercial used photodetectors and it is proven through simulation results. An analysis is conducted to prove the concept, which included absorption and generation in the photodetector, optical analysis, electrical analysis and sensitivity analysis.
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Keywords: GERMANIUM PHOTODETECTOR; INP BRAGG GRATING; PHOTOVOLTAIC DEVICES

Document Type: Research Article

Publication date: September 1, 2018

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  • Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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