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Numerical Analysis of a Novel FTO/n-MAPbI3/p-MAPbI3/p-MAPbBr3 Organic–Inorganic Lead Halide Perovskite Solar Cell

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Perovskite solar cells are of great potential for commercial application with conversion efficiency exceeding 20%. But the high temperature deposition of TiO2 and high cost of hole transport layer (Spiro-MeOTAD) fabrication of perovskite solar cell it is still not considered economical for commercial applications. Because of this reason numerical analysis was performed to propose alternate electron transport layer (ETL) and hole transport layer (HTL) for MAPbI3 absorber layer. Due to the self-doping nature of MAPbI3 device modeling for MAPbI3 as ETL and MAPbBr3 as HTL was performed in solar cell capacitance simulator (SCAPS) software. Simulation revealed dependence of open circuit voltage (V oc), short circuit current (J sc), fill factor (FF) and power conversion efficiency (PCE) on HTL, absorber layer thickness, doping concentration of absorber layer, thickness of ETL, diffusion length of minority carriers, defects at the interface between HTL/absorber and absorber/ETL. An optimum thickness for absorber layer was confirmed and is well consistent with the thickness range for practical absorber layer design. Moreover, conversion efficiency of 26.14% was revealed with absorber thickness of 300 nm and doping concentration of 6 × 1016 cm–3. The result proposed in this work will provide important guideline for the design of low cost perovskite solar cell.
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Document Type: Research Article

Publication date: September 1, 2018

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  • Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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