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Design and Analysis of Pressure Sensor Based on MEMS Cantilever Structure and Pocket Doped DG-TFET

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The role of Micro-electromechanical systems (MEMS) increases in too many applications, particularly in the recent decades. MEMS became practical once they can be fabricated using semiconductor fabrication technology. Nowadays the importance of pressure sensors increases. The pressure sensor will depend on different physical properties like capacitive, magnetic, piezoelectric and piezoresistive. In this paper we propose, pressure sensor based on Micro-electromechanical systems (MEMS) based cantilever structure and pocket doped double-gate tunneling field effect transistor (DG-TFET). The proposed MEMS architecture of pressure sensor working on the principle of capacitive gate coupling and work function of gate changes because of gas molecule diffusion. Due to change in coupling capacitance, the tunneling rate will increase inside the device. Pocket in DG-TFET and cantilever structure will enhance the drain current and hence sensitivity improved. The main advantage of pocket doped DG-TFET is its compatible with CMOS fabrication technology. The pressure sensor we used here consumes ≤1 mW power and approx. 250 μA tunneling current per nm bending of cantilever beam structure.
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Keywords: DOUBLE GATE TUNNEL FIELD EFFECT TRANSISTOR (DG-TFET); MICRO-ELECTROMECHANICAL SYSTEM (MEMS); PRESSURE SENSOR

Document Type: Research Article

Publication date: September 1, 2018

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  • Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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