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Real Space Multigrid Method for Ballistic Carbon Nanotubes Field-Effect Transistor

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This paper is focus on the development of a multigrid method, which is applied and its numerical simulation capability in carbon nanotube field-effect transistor (CNTFET). This research applied multigrid method in fixed size nanotube length, ∼45 nm, and the transistor channel (13, 0) intrinsic carbon nanotubes (CNTs). In this research, we explored and compared the performance of CNTFET in simulation time with different size of grid points (101 × 101 until 701 × 701). This enables an efficient calculation of quantum transport properties, which relies on the Poisson equation matrices in real space approach. The comparison results show that the multigrid technique requires less computational time, by up to 54% without the Jacobian matrix and 4% with the Jacobian matrix.
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Document Type: Research Article

Publication date: September 1, 2018

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  • Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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