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2D Numerical Simulation of Active Layer's Granular Structure Influence in Polycrystalline Silicon Thin Film Transistors Transfer Characteristics

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There have been extensive research efforts in thin film transistors (TFT's), since they have important applications such as active elements in driving circuits for liquid crystal displays. The high quality of active layer manufactured at low temperatures is essential to fabricate high-performances TFT's. However, in low-temperature process (<600 °C), it has been widely demonstrated that the growth of an inhomogeneous layer with columnar amorphous regions besieging a high density of states (DOS) commonly called grain boundaries. In order to continue a research we have already started in our previous papers, we have developed in this paper a program based on 2D-numerical solution of Poisson's equation and the two equations of electron's and hole's currents with a columnar grain boundaries growth to investigate the effect of the granular structure of poly-Si TFT's active layer on the transfer characteristics. The simulation's results enable us to understand the impact of the granular structure of poly-Si active layer through the pair "thickness-grain size" on the transfer characteristics of poly-Si TFT.
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Document Type: Research Article

Publication date: July 1, 2018

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  • Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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