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Electron Conductivity Effective Mass Model for Strained-Ge

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Strained-Ge technique is an effective way to continue the Moore's Law in the future. High carrier mobility in strained-Ge is the essential to enhance MOS performance. The electron mobility of the strained-Ge nMOS is closely related to the crystal orientation/substrate, due to the anisotropic nature of the electron conductivity effective mass. In this paper, we established the E-k relation model for the conduction band of the biaxial strained-Ge at first. And then the electron conductivity effective mass of the biaxial strained-Ge as a function of arbitrary crystal orientation/typical substrate is obtained. The results show that tensile stress should be chosen to improve the device performance for the biaxial strained-Ge nMOS: for the biaxial strained-Ge nMOS channel on (001) substrate, all the electron conductivity effective masses almost remain constant under strain; for the biaxial strained-Ge nMOS channel on (101) substrate, the electron conductivity effective masses along the high symmetry orientations decrease with the increasing stress; for the biaxial strained-Ge nMOS channel on (111) substrate, all the electron conductivity effective masses significantly decrease with the increasing stress, and tend to be isotropic when the applied stress is beyond the certain value. Our results can provide the important references to the strained-Ge design.
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Document Type: Research Article

Publication date: July 1, 2018

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  • Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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