Frequency and Voltage Dependent Profile of Dielectric Parameters and Electric Modulus for Al/(HgS-PVA)/p-Si Capacitor via Impedance Spectroscopy Method
The complex dielectric constant, complex electric modulus and electrical conductivity of a Al/HgS-PVA/p-Si (MPS) capacitor were investigated via impedance spectroscopy method. Measurements have been performed within the frequency range of 2 kHz and 2 MHz between –3 V and 5 V increased by 50 mV at room temperature. Both the real and imaginary components of the complex dielectric constant and complex electric modulus were found as a strong function of frequency and voltage especially in the forward bias region. On the other hand, the dielectric loss and tangent loss versus voltage plots showed a peak behavior especially at lower frequencies in the depletion region. Similarly, real and imaginary parts of the complex electric modules versus log (frequency) plots showed a peak behavior in the depletion region, but it disappeared in the accumulation region. Additionally, three linear regions, which are classified as the low (slope = 0.74), intermediate (slope = 1.09) and high (slope = 0.68) frequency ranges, have been observed in the In (conductivity) versus In (frequency) plots.
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Document Type: Research Article
Publication date: March 1, 2018
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- Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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