Role of Growth Conditions on Optical Behavior of Mn Doped ZnTe by Using Chemical Vapor Deposition Route

In this paper, we explore the physical parameter of thermal chemical vapor deposition (CVD) such as substrate temperature, ramp rate (RR) and growth temperature and time that directly influences on optical, electrical and structural properties of Mn doped ZnTe. Raman and Photoluminescence (PL) used as characterization tool to investigate CVD related parameters. Herein, we design portable boat to know the exact value of substrate temperature throughout experiment which is critical parameter for physical evaporation system. Further, numerical simulations with the help of COMSOL was used to investigate the thermodynamic and kinetics of chemical species for growth with time evolution. Moreover, we demonstrate that the balance between diffusion and convection to ensure uniform growth conditions, which can be altered by heating ramp rate that changes in chemical potential under different growth temperature. For 900 °C growth temperature, Zn_{1– x} Mn _x Te show strong background luminescence due to resonance. Moreover, strong luminescence behavior of Mn doped ZnTe depends on ramp rate and substrate temperature. For 820 °C (RR = 10 °C/min), the strong luminescence of Zn_{1– x} Mn _x Te exhibits ranging from 530–580 °C substrate temperature. Meanwhile, for RR = 100 °C/min demonstrate the strong luminescence at 515–560 °C. For substrate temperature, 480 °C (RR = 10 °C/min) and 515 °C (RR = 100 °C/min) show strong nth LO phonon peaks of Zn_{1– x} Mn _x Te.