Impact of Gatelength on the Performance of InGaAs/InAs/InGaAs Composite Channel Dual Material Double Gate-High Electron Mobility Transistor Devices for High-Frequency Applications
In this work, the Impact of gate length (L
g) on the performance of InGaAs/InAs/InGaAs Composite Channel DMDG-HEMT Devices for high-Frequency applications is investigated. The effects of gate length (L
g) on the device characteristics are explored by
optimizing the barrier thickness(T
B). It is evident that by introducing dual material gate (DMG), at both top and bottom of the device, shows an increase in drain current, transconductance and higher I
ON
/I
OFF ratio with less short channel
effect (SCE). For drain to source voltage (V
ds) = 1 V, InGaAs/InAs/InGaAs composite channel DMDG-HEMT devices exhibit the record drain current (I
ds) of 4.42 × 10–3 A/μm, transconductance (g
m) of 4.48 S/mm
and an current ratio I
ON
/I
OFF = 6.8 × 105 with a reduced subthreshold slope (SS) of 62.1 mV/dec and a threshold voltage (V
T) = – 0.12 V for 40 nm gate length. Moreover, the RF and analog performance metrics are explored
and record high cutoff frequency f
T = 835 GHz and maximum oscillation frequency f
max = 986 GHz making it suitable for future terahertz applications.
Keywords: CUTOFF FREQUENCY (FT); DUAL MATERIAL DOUBLE GATE (DMDG); INAS COMPOSITE CHANNEL; SHEET CARRIER DENSITY (NS); SHORT CHANNEL EFFECTS (SCE)
Document Type: Research Article
Publication date: 01 December 2017
- Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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