Sintering Temperature Effects on the Dielectric and Piezoelectric Properties of the Cu Doped (1–x)Na_0.5K_0.5NbO₃–xBiScO₃ Ceramics

In this research, the Cu doped (1–x)Na_0.5K_0.5NbO₃–xBiScO, x = 0.02 ceramics were investigated by varying the sintering temperatures to enhance their piezoelectric characteristics by complementing volatile components of Na and K. As dopants, Cu, Bi, and Sc were selected and investigated to improve the density and piezoelectric properties. The effect of sintering temperature on the electrical and structural properties were studied. We expect that the optimized sintering temperature can improve the dielectric and piezoelectric properties of the Cu doped (1–x)Na_0.5K_0.5NbO₃–xBiScO, x = 0.02 ceramics. The structural properties of the Cu doped (1–x)Na_0.5K_0.5NbO₃–xBiScO, x = 0.02 ceramics were measured by X-ray diffraction patterns. Also, piezoelectric charge coefficient d ₃₃ and electromechanical coupling factor k_p will be discussed.